The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy

Authors
Foxon, CT Novikov, SV Liao, Y Winser, AJ Harrison, I Li, T Campion, RP Staddon, CR Davis, CS
Citation
Ct. Foxon et al., The transition from blue emission in As-doped GaN to GaNAs alloys in layers grown by molecular beam epitaxy, PHYS ST S-B, 228(1), 2001, pp. 203-206
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
203 - 206
Database
ISI
SICI code
0370-1972(200111)228:1<203:TTFBEI>2.0.ZU;2-X
Abstract
The transition from As-doped GaN showing strong blue emission (similar to2. 6 eV) at room temperature to the formation of GaN1-xAsx alloys for films gr own by molecular beam epitaxy was investigated. This study demonstrates tha t with increasing N to Ga ratio there is first an increase in the intensity of blue emission at about 2.6 eV and then a transition to the growth of Ga N1-xAsx alloy films. Several possible models, which can explain how this mi ght occur are presented.