Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system

Authors
Novikov, SV Li, T Winser, AJ Campion, RP Staddon, CR Davic, CS Harrison, I Foxon, CT
Citation
Sv. Novikov et al., Temperature dependence of the miscibility gap on the GaN-Rich side of the Ga-N-As system, PHYS ST S-B, 228(1), 2001, pp. 223-225
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI B-BASIC RESEARCH
ISSN journal
03701972 → ACNP
Volume
228
Issue
1
Year of publication
2001
Pages
223 - 225
Database
ISI
SICI code
0370-1972(200111)228:1<223:TDOTMG>2.0.ZU;2-A
Abstract
We have investigated the temperature dependence of the transition from sing le phase films of GaN1-xAsx to phase separated layers. which show regions o f hexagonal [0001] oriented GaN. cubic [111] oriented GaAs and hexagonal [0 001] oriented GaN1-xAsx. We see a strong temperature dependence of the arse nic flux at which GaAs inclusions are first observed. Finally the intensity of blue emission observed in As-doped GaN samples decreases strongly with decreasing growth temperature.