InNAs/GaAs multiple-quantum-well samples were grown by MOCVD on (100) n(+)-
GaAs substrates at 500 degreesC and 60 Torr using uncracked dimethylhydrazi
ne (DMHy). Quantum well layers were grown using trimethylindium, tertiarybu
tylarsine, and 95-97.5% of DMHy in the vapor phase, while GaAs buffer, barr
ier, and cap layers were grown using trimethylgallium and arsine. The cryst
alline quality and solid phase composition were evaluated using high-resolu
tion X-ray diffraction analysis. The nitrogen content in InNAs wells was de
termined to be 18%. Surface morphology was investigated by atomic force mic
roscopy (AFM) and field emission microscopy (FEM). Photoluminescence measur
ements confirm that the bandgap energy of InNAs is significantly lower than
that of InAs. The peak emission wavelength of similar to6.5 mum at 10 K is
the longest reported so far for dilute nitride semiconductors.