MOCVD growth of InNxAs1-x on GaAs using dimethylhydrazine

InNAs/GaAs multiple-quantum-well samples were grown by MOCVD on (100) n(+)- GaAs substrates at 500 degreesC and 60 Torr using uncracked dimethylhydrazi ne (DMHy). Quantum well layers were grown using trimethylindium, tertiarybu tylarsine, and 95-97.5% of DMHy in the vapor phase, while GaAs buffer, barr ier, and cap layers were grown using trimethylgallium and arsine. The cryst alline quality and solid phase composition were evaluated using high-resolu tion X-ray diffraction analysis. The nitrogen content in InNAs wells was de termined to be 18%. Surface morphology was investigated by atomic force mic roscopy (AFM) and field emission microscopy (FEM). Photoluminescence measur ements confirm that the bandgap energy of InNAs is significantly lower than that of InAs. The peak emission wavelength of similar to6.5 mum at 10 K is the longest reported so far for dilute nitride semiconductors.