Photoluminescence study on temperature dependence of band gap energy of GaAsN alloys

We have studied the temperature dependence of photo luminescence (PL) spect ra of GaAsN alloys. The PL peak energy shift due to the temperature change decreases with increasing N concentration of GaAsN alloys. The localized st ate emission partly contributes to the decrease in the PL peak energy shift . In addition, the small PL peak energy shift at high temperatures is due t o the reduction in the temperature dependence of the band gap energy. From the analysis using the Bose-Einstein statistical expression, the average ph onon energy is much larger than that expected from the linear interpolation between GaAs and GaN, indicating that the interaction between electrons an d phonons localized at N atoms plays an important role in the reduction of the temperature dependence of the band gap energy of GaAsN alloys.