Passivation and doping due to hydrogen in III-nitrides

We have systematically studied the electronic structure and stability of hy drogen in AIN, GaN, and InN, based on first-principles calculations. In GaN and AIN, H is amphoteric and always compensates the prevailing conductivit y: in GaN, H is stable for Fermi levels below 2.2 ev, and in AIN, H+ is sta ble for E-F below 2.5 eV. In InN, we find that H I is stable for all Fermi level positions; i.e., H behaves exclusively as a donor. Consequences for c ontrolling the conductivity of InN are discussed.