Electronic states in the antiferromagnetic phase of electron-doped high-T-c cuprates - art. no. 212505

We investigate the electronic states in the antiferromagnetic (AF) phase of electron-doped cuprates by using numerically exact diagonalization techniq ue for a t-t'-t"-J model. When AF correlation develops with decreasing temp erature, a gaplike behavior emerges in the optical conductivity. Simultaneo usly, the coherent motion of carriers due to the same sublattice hoppings i s enhanced. We propose that the phase is characterized as an AF state with small Fermi surface around the momentum k= (pi ,0) and (0,pi). This is a re markable contrast to the behavior of hole-doped cuprates.