Diamond pressure and temperature sensors for high-pressure high-temperature applications

A high-pressure high-temperature diamond based sensor has been developed fo r the use in diamond anvil cells. The electronic structure of the sensor is that of p-i-p unipolar diode with boron doped p-type regions separated by an i-region containing compensated boron accepters. The sensor has been fab ricated by high-temperature high-energy boron ion implantation followed by high-energy carbon ion irradiation on the working surface of an anvil made of type IIa natural diamond. The performance of the sensor has been tested at pressures up to 70 kbar and temperatures up to 800 degreesC. The sensor has a resolution of 5 bar fur pressure and of 0.01 degreesC for temperature .