The influence of surface preparation on the properties of SiC on Si(111)

The silicon (111) surface was converted into silicon carbide by using: 1. p ropane diluted in hydrogen and rapid thermal processing, 2. elemental carbo n deposited onto the silicon surface by solid source molecular beam epitaxy and subsequent annealing, i.e. conversion in a hydrogen poor environment, 3. modification of the silicon surface by Ge predeposition prior to element al carbon deposition, These methods were compared according to their influe nce on the structure. morphology and electronic properties of the SiC/Si(11 1) heteroepitaxial system. It was found that the conversion in a hydrogen r ich environment leads to the formation of a carbon (111) silicon carbide fa ce, whereas a silicon (111) silicon carbide face was formed under hydrogen poor conditions. Germanium predeposition led to an improvement of the struc tural morphological and electrical properties of the silicon carbide-silico n heteroepitaxial system.