Mesoscopic kondo screening effect in a single-electron transistor embeddedin a metallic ring

Citation
H. Hu et al., Mesoscopic kondo screening effect in a single-electron transistor embeddedin a metallic ring, PHYS REV L, 86(24), 2001, pp. 5558-5561
Citations number
15
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
24
Year of publication
2001
Pages
5558 - 5561
Database
ISI
SICI code
0031-9007(20010611)86:24<5558:MKSEIA>2.0.ZU;2-5
Abstract
We study the Kondo screening effect generated by a single-electron transist or or quantum dot embedded in a small metallic ring. When the ring circumfe rence L becomes comparable to the fundamental length scale xi (0)(K) = h(up silonF)/T-K(0) associated with the bulk Kondo temperature, the Kondo resona nce is strongly affected, depending on the total number of electrons (mod4) and magnetic flux threading the ring. The resulting Kondo-assisted persist ent currents are also calculated in both Kondo and mixed-valence regimes, a nd the maximum values are found in the crossover region.