Nearly 3 orders of magnitude enhancement in the Hall coefficient is observe
d in Cu-x -(SiO2)(1-x) granular films. This large enhancement of the Hall c
oefficient not only is significantly larger than the prediction of the clas
sical percolation theory, but also occurs at a metal concentration identifi
ed to be the quantum percolation threshold. Measurements of the electron de
phasing length and magnetoresistance, plus the TEM characterization of micr
ostructures, yield a physical picture consistent with the mechanism of the
local quantum interference effect.