Ferromagnetism in magnetically doped III-V semiconductors

Authors
Litvinov, VI Dugaev, VK
Citation
Vi. Litvinov et Vk. Dugaev, Ferromagnetism in magnetically doped III-V semiconductors, PHYS REV L, 86(24), 2001, pp. 5593-5596
Citations number
33
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
00319007 → ACNP
Volume
86
Issue
24
Year of publication
2001
Pages
5593 - 5596
Database
ISI
SICI code
0031-9007(20010611)86:24<5593:FIMDIS>2.0.ZU;2-3
Abstract
The origin of ferromagnetism in semimagnetic III-V materials is discussed. The indirect exchange interaction caused by virtual electron excitations fr om magnetic impurity acceptor levels to the valence band can explain ferrom agnetism in GaAs(Mn) in both degenerate and nondegenerate samples. Formatio n of ferromagnetic clusters and the percolation picture of phase transition describes well all available experimental data and allows us to predict th e Mn-composition dependence of transition temperature in wurtzite (Ga,In,AI )N epitaxial layers.