SiGeHBTs for application in BiCMOS technology: I. Stability, reliability and material parameters

Authors
Jain, SC Decoutere, S Willander, M Maes, HE
Citation
Sc. Jain et al., SiGeHBTs for application in BiCMOS technology: I. Stability, reliability and material parameters, SEMIC SCI T, 16(6), 2001, pp. R51-R65
Citations number
77
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
02681242 → ACNP
Volume
16
Issue
6
Year of publication
2001
Pages
R51 - R65
Database
ISI
SICI code
0268-1242(200106)16:6<R51:SFAIBT>2.0.ZU;2-R
Abstract
Extensive work has been done on the SiGe HBTs for BiCMOS applications recen tly. The work on stability, reliability, simulation and material parameters is critically examined and reviewed in this part of the review. The work o n the design, technology and performance of the HBTs will be discussed in p art II of the review.