Electronic properties of Si delta-doped GaAs under an applied electric field

We have theoretically investigated the electronic structure of Si delta -do ped GaAs inserted into a quantum well under an applied electric field. For uniform distribution we have studied the influence of the electric field on the donor concentration. The electronic properties such as the effective p otential. the density profile, the subband energies, the subband occupation s and the Fermi energy level have been calculated by solving the Schrodinge r and Poisson equations self-consistently. From our calculations, we have s een that the change of the electronic properties as dependent on the applie d electric field is more pronounced at low doping concentration. The high e lectric fields can induce a spatial separation between confined electrons a nd ionized dopants in the delta -doped GaAs structure, resulting in enhance d free-carrier mobility in devices.