Microstructural modeling of ferroelectric fracture

Authors
Citation
Cc. Fulton et H. Gao, Microstructural modeling of ferroelectric fracture, ACT MATER, 49(11), 2001, pp. 2039-2054
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
ACTA MATERIALIA
ISSN journal
13596454 → ACNP
Volume
49
Issue
11
Year of publication
2001
Pages
2039 - 2054
Database
ISI
SICI code
1359-6454(20010622)49:11<2039:MMOFF>2.0.ZU;2-N
Abstract
We present a microstructural model for ferroelectric ceramics based on the domain-level events occurring at the Curie transition point. Spontaneous po larization and strain are represented by discrete electric dipoles and forc e couples, respectively, affixed to an isotropic background medium. The fie lds of these point defects cause local domain interactions, and their orien tations are made to switch when an electromechanical energy threshold is ex ceeded. The model accurately reproduces the hysteresis curves, butterfly lo ops, and other fundamental aspects of typical ferroelectric material behavi or. In addition, by simulating domain switching near a crack tip, we predic t the previously unexplained decrease in apparent fracture toughness with a pplied voltage that has been observed in the laboratory. (C) 2001 Acta Mate rialia Inc. Published by Elsevier Science Ltd. All rights reserved.