The growth of transition metals on H-passivated Si(111) substrates

Authors
Hauch, JO Fonine, M May, U Calarco, R Kittur, H Choi, JM Rudiger, U Guntherodt, G
Citation
Jo. Hauch et al., The growth of transition metals on H-passivated Si(111) substrates, ADV FUNCT M, 11(3), 2001, pp. 179-185
Citations number
42
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
ADVANCED FUNCTIONAL MATERIALS
ISSN journal
1616301X → ACNP
Volume
11
Issue
3
Year of publication
2001
Pages
179 - 185
Database
ISI
SICI code
1616-301X(200106)11:3<179:TGOTMO>2.0.ZU;2-9
Abstract
The growth of Co and Ag layers on wet-processed H-passivated Si(lll) substr ates by molecular beam epitaxy (MBE) has been studied using high resolution scanning tunneling microscopy (STM) with regard to possible applications o f the layers in magnetoelectronic devices. Roughness and intermixing at int erfaces as functions of deposition temperature and layer thickness are key parameters for the performance of such devices. The initial growth of Co an d Ag and the influence of Ag atoms on the Si(111) surface reconstructions p rovide insight into adatom-substrate interactions.