An efficient chemical solution deposition method for epitaxial gallium nitride layers using a single-molecule precursor

An efficient chemical solution deposition (CSD) approach to growing epitaxi al GaN layers at relatively low temperatures using a single-molecule precur sor (SMP) is described. The precursor employed was bisazido diethylaminopro pyl gallium, which exists as a dimer in the solid state and decomposes at r elatively low temperatures. Using this precursor, epitaxial GaN layers were grown and characterized for their morphology, microstructure, and composit ion by X-ray diffraction (XRD), X-ray rocking curve (XRC) analysis, pole fi gure measurements, reciprocal space mappings, scanning electron microscopy (SEM), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (X PS), and room temperature photoluminescence (PL) measurements.