Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors

Authors
Kamp, M Hofmann, J Forchel, A Lourdudoss, S
Citation
M. Kamp et al., Ultrashort InGaAsP/InP lasers with deeply etched Bragg mirrors, APPL PHYS L, 78(26), 2001, pp. 4074-4075
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
26
Year of publication
2001
Pages
4074 - 4075
Database
ISI
SICI code
0003-6951(20010625)78:26<4074:UILWDE>2.0.ZU;2-#
Abstract
We have fabricated short cavity lasers with deeply etched Bragg mirrors bas ed on 1.55 mum emitting InGaAsP/InP laser structures. Continuous-wave opera tion has been obtained for devices with a length of 40 mum, showing thresho ld currents of 12 mA. The dynamic properties of the lasers were studied by measurements of the relative intensity noise (RIN). A maximum modulation fr equency of 8.4 GHz was extracted from the RIN data. (C) 2001 American Insti tute of Physics.