Integrated porous-silicon light-emitting diodes: A fabrication process using graded doping profiles

A fabrication process, compatible with an industrial bipolar+complementary metal-oxide-semiconductor (MOS)+diffusion MOS technology, has been develope d for the fabrication of efficient porous-silicon-based light-emitting diod es. The electrical contact is fabricated with a double n(+)/p doping, achie ving a high current injection efficiency and thus lower biasing voltages. T he anodization is performed as the last step of the process, thus reducing potential incompatibilities with industrial processes. The fabricated devic es show yellow-orange electroluminescence, visible with the naked eye in ro om lighting. A spectral characterization of light emission is presented and briefly discussed. (C) 2001 American Institute of Physics.