Gs. Wang et al., Properties of highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructuresprepared by chemical solution routes, APPL PHYS L, 78(26), 2001, pp. 4172-4174
Highly (100) oriented Ba0.9Sr0.1TiO3/LaNiO3 heterostructures have been grow
n on Si(100) using chemical solution routes. X-ray diffraction analysis sho
ws that Ba0.9Sr0.1TiO3 thin films are high (100) orientation (alpha (100)=0
.92). Atomic force microscopy investigation shows that they have large grai
ns about 80-200 nm. A Pt/Ba0.9Sr0.1TiO3/LaNiO3 capacitor has been fabricate
d and showed excellent ferroelectricity, the remnant polarization and coerc
ive field are 10.8 muC/cm(2) and 96 kV/cm, respectively. The electric field
dependence of capacitance measurement shows that the capacitor has large c
apacitance tuning ([C-max-C-min]/C(max)x100%) of 63%. The Ba0.9Sr0.1TiO3 th
in films have high dielectric constant (epsilon) of 200 at 1 MHz. (C) 2001
American Institute of Physics.