Electroluminescence from a forward-biased Schottky barrier diode on modulation Si delta-doped GaAs/InGaAs/AlGaAs heterostructure

Electroluminescence (EL) from a forward-biased Schottky barrier diode on mo dulation Si delta -doped pseudomorphic GaAs/InGaAs/AlGaAs heterostructure w ith high mobility electron gas,is investigated in this work. It has been fo und that the EL from the InGaAs quantum well can be observed at temperature s up to 90 K. The EL line shape depends on the current density, which refle cts the filling of the InGaAs channel with electrons. The total integrated EL intensity depends linearly on the current density. We propose that hole diffusion from an inversion layer at the Schottky barrier is responsible fo r the observed optical recombination with electrons in the InGaAs quantum w ell. (C) 2001 American Institute of Physics.