Optical transitions and excitonic recombination in InAs/InP self-assembledquantum wires

Authors
Alen, B Martinez-Pastor, J Garcia-Cristobal, A Gonzalez, L Garcia, JM
Citation
B. Alen et al., Optical transitions and excitonic recombination in InAs/InP self-assembledquantum wires, APPL PHYS L, 78(25), 2001, pp. 4025-4027
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
25
Year of publication
2001
Pages
4025 - 4027
Database
ISI
SICI code
0003-6951(20010618)78:25<4025:OTAERI>2.0.ZU;2-K
Abstract
InAs self-assembled quantum wire structures have been grown on InP substrat es and studied by means of photoluminescence and polarized-light absorption measurements. According to our calculations, the observed optical transiti ons in each sample are consistent with wires of different heights, namely f rom 6 to 13 monolayers. The nonradiative mechanism limiting the emission in tensity at room temperature is related to thermal escape of carriers out of the wires. (C) 2001 American Institute of Physics.