Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys, Lett. 76, 1585 (2000)]

Authors
Afanas'eva, VV Stesmans, A Bassler, M Pensl, G Schulz, MJ
Citation
Vv. Afanas'Eva et al., Comment on "Reduction of interface-state density in 4H-SiC n-type metal-oxide-semiconductor structures using high-temperature hydrogen annealing" [Appl. Phys, Lett. 76, 1585 (2000)], APPL PHYS L, 78(25), 2001, pp. 4043-4044
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
78
Issue
25
Year of publication
2001
Pages
4043 - 4044
Database
ISI
SICI code
0003-6951(20010618)78:25<4043:CO"OID>2.0.ZU;2-A