S. Zimmermann et al., ROLE OF HOLE LOCALIZATION IN THE OPTICAL SINGULARITIES OF A 2-DIMENSIONAL ELECTRON-GAS STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE, Semiconductor science and technology, 12(8), 1997, pp. 953-957
The coexistence of localized and free holes in modulation doped InGaAs
/InP quantum wells, which show Fermi edge singularities in the cw phot
oluminescence and excitation spectra, has been determined by picosecon
d time-resolved luminescence spectroscopy. A long-lived peak at the to
w-energy side of the emission spectrum is observed at 5 K and weak exc
itation. The peak, which vanishes on either increasing the temperature
at similar to 30 K or increasing the excitation density, is attribute
d to recombination of free electrons with localized holes. The simulta
neous presence of free and localized holes explains the lineshapes obs
erved in cw measurements and the presence of Fermi edge singularities.