ROLE OF HOLE LOCALIZATION IN THE OPTICAL SINGULARITIES OF A 2-DIMENSIONAL ELECTRON-GAS STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE

Citation
S. Zimmermann et al., ROLE OF HOLE LOCALIZATION IN THE OPTICAL SINGULARITIES OF A 2-DIMENSIONAL ELECTRON-GAS STUDIED BY TIME-RESOLVED PHOTOLUMINESCENCE, Semiconductor science and technology, 12(8), 1997, pp. 953-957
Citations number
21
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
12
Issue
8
Year of publication
1997
Pages
953 - 957
Database
ISI
SICI code
0268-1242(1997)12:8<953:ROHLIT>2.0.ZU;2-Z
Abstract
The coexistence of localized and free holes in modulation doped InGaAs /InP quantum wells, which show Fermi edge singularities in the cw phot oluminescence and excitation spectra, has been determined by picosecon d time-resolved luminescence spectroscopy. A long-lived peak at the to w-energy side of the emission spectrum is observed at 5 K and weak exc itation. The peak, which vanishes on either increasing the temperature at similar to 30 K or increasing the excitation density, is attribute d to recombination of free electrons with localized holes. The simulta neous presence of free and localized holes explains the lineshapes obs erved in cw measurements and the presence of Fermi edge singularities.