Mh. Ludwig et al., COLOR-SWITCHING EFFECT OF PHOTOLUMINESCENT SILICON AFTER SPARK-PROCESSING IN OXYGEN, Semiconductor science and technology, 12(8), 1997, pp. 981-986
We report on a new colour-switching effect of photoluminescing spark-p
rocessed silicon which was prepared in pure oxygen. Whereas as-prepare
d specimens display an orange PL peaking at 655 nm (1.89 eV), the PL c
hanges to a more intense blue emission centred at 475 nm (2.61 eV) whe
n the sample is subjected to a lower pressure. The same blue PL band i
s observed after heat treatments up to 350 degrees C. Moreover, at ann
ealing temperatures above 400 degrees C a third radiative transition e
merges in the infrared and eventually dominates the spectrum. A model
is suggested that links ozone molecules, generated during spark-proces
sing and incorporated into the sp-matrix, to the orange PL band. The r
esults of heat treatments and temperature-dependent Pt measurements al
low for the relationship of the 2.61 eV band to oxygen deficiency cent
res, created by out-driven ozone molecules. The IR band is discussed i
n the light of luminescing properties of porous silicon and silicon ox
ides. The experiments demonstrate that the UV/blue (3.25 eV) and green
(2.36 eV) PL bands for Si spark-processed in air cannot be related to
radiative transitions in silicon oxides.