SHORT-PERIOD SURFACE SUPERLATTICES FORMED BY PLASMA-ETCHING

Citation
Y. Paltiel et al., SHORT-PERIOD SURFACE SUPERLATTICES FORMED BY PLASMA-ETCHING, Semiconductor science and technology, 12(8), 1997, pp. 987-990
Citations number
31
Categorie Soggetti
Engineering, Eletrical & Electronic","Physics, Condensed Matter","Material Science
ISSN journal
02681242
Volume
12
Issue
8
Year of publication
1997
Pages
987 - 990
Database
ISI
SICI code
0268-1242(1997)12:8<987:SSSFBP>2.0.ZU;2-Z
Abstract
We report the development of a process for fabricating etched surface superlattices (SSL). We utilize few-voltage electron cyclotron resonan ce plasma etching in conjunction with electron beam lithography to for m a short-pitch grating relief on GaAs/AlGaAs heterostructures hosting a high-mobility two-dimensional electron gas (2DEG). The process mini mizes damage to the 2DEG and results in highly uniform etched gratings . A Schottky gate covering the etched surface appears to improve the e lectrical properties of the SSLs. Magnetotransport measurements show t he effectiveness of this technique in realizing high-quality SSLs with periods down to 100 nm.