A striking anodic behaviour of p-GaAs semiconductor in acidic liquid ammonia (223 K)

Authors
Goncalves, AM Mathieu, C Herlem, M Etcheberry, A
Citation
Am. Goncalves et al., A striking anodic behaviour of p-GaAs semiconductor in acidic liquid ammonia (223 K), ELECTR ACT, 46(18), 2001, pp. 2835-2841
Citations number
26
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
ELECTROCHIMICA ACTA
ISSN journal
00134686 → ACNP
Volume
46
Issue
18
Year of publication
2001
Pages
2835 - 2841
Database
ISI
SICI code
0013-4686(20010531)46:18<2835:ASABOP>2.0.ZU;2-5
Abstract
In acidic liquid ammonia, the anodic behaviour of the p-GaAs semiconductor is strongly different than in aqueous media. The anodic process in liquid a mmonia involves the formation and adsorption of a thin film onto the p-GaAs surface. This thin film leads to the oxidation of the solvent. The initial state of the semiconductor electrode was recovered by photoreduction of th e thin film. (C) 2001 Elsevier Science Ltd. All rights reserved.