The paper describes the work carried out in modelling the self-protected li
ght-triggered thyristor (SPELTT). In particular, a sophisticated quasi-thre
e-dimensional model was developed for the structure, which included all the
important circuit/device interactions. The model was used to investigate t
he sensitivity of critical operation timings to various processing paramete
rs for the structure. Excellent agreement was found with experimental measu
rements on the device. The predictive capability of the model has led to id
entifying approaches which significantly improve the device performance.