Optimum design of 1.4kV non-punch-through trench IGBTs: the next generation of high-power switching devices

The trench insulated gate bipolar transistor (IGBT) is widely regarded as a worthy replacement of DMOS IGBTs and GTO thyristors in a wide range of app lications, from motor control (1.4kV) to HVDC (6.5kV). An optimum design of 1.4kV N-PT trench IGBTs using a new fully integrated optimisation system c omprised of process and device simulators and an RSM optimiser is described . The use of this new TCAD system has contributed largely to realising devi ces with characteristics far superior to the previous DMOS generation of IG BTs. Full experimental results on 1.4kV trench IGBTs are reported, which ar e in excellent agreement with the TCAD predictions.