Clustered insulated gate bipolar transistor: a new power semiconductor device

For the first time, the authors demonstrated a new MOS gated thyristor call ed the clustered insulated gate bipolar transistor (CIGBT), which is formed by clustering power MOSFET cathode cells within common n- and p-wells. The n- and p-wells also provide a unique self-clamping feature that protects t he cathode from any surge current or voltage and thus improve its safe oper ating area. Detailed electrical simulations of 3 kV structures derived dire ctly from a process simulator indicate at least 30% improvement in the on-s tate and switching performance of the CIGBT in comparison to an IGBT.