Injection-enhancement effect in a novel, trench-planar insulated gate bipolar transistor

A novel 1.2kV, trench-planar insulated gate bipolar transistor (TPIGBT) is analysed in detail using numerical modelling techniques to evaluate the inf luence of the injection-enhancement (IE) effect. A major innovative aspect of the device is that the trench and the planar gate oxide dimensions can b e independently optimised to achieve superior performance. Furthermore, it is shown that the low conduction losses of the TPIGBT are a direct conseque nce of the IE effect. Results indicate a good trade-off in terms of on-stat e and tnm-off losses in comparison to the planar and trench gated IGBTs.