Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes

Authors
Chang, SJ Su, YK Chen, JF Wen, LF Huang, BR
Citation
Sj. Chang et al., Effects of electron effective mass on the multiquantum barrier structure in AlGaInP laser diodes, IEE P-OPTO, 148(2), 2001, pp. 117-120
Citations number
23
Categorie Soggetti
Optics & Acoustics
Journal title
IEE PROCEEDINGS-OPTOELECTRONICS
ISSN journal
13502433 → ACNP
Volume
148
Issue
2
Year of publication
2001
Pages
117 - 120
Database
ISI
SICI code
1350-2433(200104)148:2<117:EOEEMO>2.0.ZU;2-Z
Abstract
The effects of electron effective mass on the multiquantum barrier (MQB) st ructure in AlGalnP LD has been systematically studied. Using a new effectiv e mass model, we found that we can achieve an enhanced barrier height of 1. 68U(0) or 253 m eV. However, such an increase in barrier height is much sma ller than the previous reported value obtained using a different electron e ffective mass model. We also found that the chirped MQB (CMQB) can only enh ance the barrier height by 0.276U(0). On the other hand, the enhanced barri er height can reach 2.2U(0) for a properly designed multistack MQB (MSMQB).