USE OF GUIDED SPONTANEOUS EMISSION OF A SEMICONDUCTOR TO PROBE THE OPTICAL-PROPERTIES OF 2-DIMENSIONAL PHOTONIC CRYSTALS

Authors
LABILLOY D BENISTY H WEISBUCH C KRAUSS TF HOUDRE R OESTERLE U
Citation
D. Labilloy et al., USE OF GUIDED SPONTANEOUS EMISSION OF A SEMICONDUCTOR TO PROBE THE OPTICAL-PROPERTIES OF 2-DIMENSIONAL PHOTONIC CRYSTALS, Applied physics letters, 71(6), 1997, pp. 738-740
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
6
Year of publication
1997
Pages
738 - 740
Database
ISI
SICI code
0003-6951(1997)71:6<738:UOGSEO>2.0.ZU;2-M
Abstract
We describe an experimental setup, which allows assessing the optical properties of two-dimensional photonic crystals combined with a wavegu ide geometry, and etched into a light-emitting (GaAs/InGaAs) semicondu ctor. By means of a guiding layer, the spontaneous emission of the mat erial is used as a built-in source to probe the properties of the etch ed microstructure, conveniently compared to the usual measurement sche mes. We show polarized transmission and coefficients largely depending on the photonic crystal orientation. (C) 1997 American Institute of P hysics.