5-WAVELENGTH SURFACE-EMITTING LASER-DIODE ARRAY BASED ON POSTGROWTH ADJUSTMENT OF EMISSION WAVELENGTH

Citation
A. Golshani et al., 5-WAVELENGTH SURFACE-EMITTING LASER-DIODE ARRAY BASED ON POSTGROWTH ADJUSTMENT OF EMISSION WAVELENGTH, Applied physics letters, 71(6), 1997, pp. 762-764
Citations number
9
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00036951
Volume
71
Issue
6
Year of publication
1997
Pages
762 - 764
Database
ISI
SICI code
0003-6951(1997)71:6<762:5SLABO>2.0.ZU;2-A
Abstract
A five-wavelength surface emitting laser diode array based on surface mode emission is reported. The wavelength control is achieved by postg rowth adjustment of the surface structure. Wavelength spacing between laser groups is 1.1 nm in average and the wavelength reproducibility i s +/-0.13 nm. The total change in the emission wavelength over the arr ay is 4.78 nm. The single array elements show single mode emission wit h a full width at half-maximum of 0.08 nm in average and a side mode s uppression ratio up to 20 dB. This type of laser diode is of high inte rest for wavelength division multiplexing applications. (C) 1997 Ameri can Institute of Physics.