DISLOCATION-FREE INSB GROWN ON GAAS COMPLIANT UNIVERSAL SUBSTRATES

An innovative compliant GaAs substrate was formed by wafer bonding a 3 0 Angstrom GaAs layer to a bulk GaAs crystal with a large angular misa lignment inserted about their common normals. InSb epitaxial layers, w hich is about 15% lattice mismatched to GaAs, have been grown on both compliant substrates and conventional GaAs substrates. Transmission el ectron microscopy studies showed that the InSb films grown on the comp liant substrates have no measurable threading dislocations, whereas th e InSb films on the conventional GaAs substrates exhibited dislocation densities as high as 10(11) cm(-2). The observations made here sugges t that the defect-free heteroepitaxial growth of exceedingly large lat tice-mismatched crystals can be achieved with compliant universal subs trates. (C) 1997 American Institute of Physics.