Jp. Vanderziel et al., OPTICAL STUDIES OF VERY HIGH-PURITY GAAS GROWN BY METAL-ORGANIC CHEMICAL-VAPOR-DEPOSITION USING A POINT-OF-USE ARSINE (ASH3) GENERATOR, Applied physics letters, 71(6), 1997, pp. 791-793
We describe low-temperature photoluminescence studies of high-purity e
pitaxial GaAs and GaAs/AlGaAs quantum wells;grown in a low-pressure me
tal-organic chemical-vapor deposition (MOCVD) reactor using electrolyt
ically generated AsH3 as the group V source material and trimethylgall
ium and trimethylaluminum as the group III sources. The use of on-site
point-of-use generated AsH3, made using the electrolytic conversion o
f solid As source material, greatly improves the safety of the MOCVD g
rowth process, since AsH3 is generated only as needed, and at any time
only a small volume of AsH3 is present. The photoluminescence studies
indicate that very high-purify GaAs and GaAs/AlGaAs quantum wells lay
ers are obtained using this source of AsH3. The GaAs/AlGaAs material h
as been used for a variety of devices including photodetectors and low
threshold vertical cavity surface emitting lasers. (C) 1997 American
Institute of Physics.