Electron held-emission tests have been performed on films grown by a m
odified microwave plasma assisted chemical vapor deposition diamond pr
ocess. This modification includes the addition of N-2 and O-2 during t
he growth stage. Characterization of these films shows the presence of
a disordered tetrahedral carbon structure. Raman spectroscopy indicat
es a disturbance in the cubic symmetry of the lattice and x-ray diffra
ction indicates a disordered tetrahedral structure. Field-emission tes
ting indicate that current densities of 0.5 mA/cm(2) can be obtained f
or applied fields of 5-8 V/mu m. The results are explained in terms of
a change in the band structure and the formation of electronic states
in the band gap. (C) 1997 American Institute of Physics.