EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/

Authors
DUENAS S PELAEZ R CASTAN E PINACHO R QUINTANILLA L BARBOLLA J MARTIL I GONZALEZDIAZ G
Citation
S. Duenas et al., EXPERIMENTAL-OBSERVATION OF CONDUCTANCE TRANSIENTS IN AL SINX-H/SI METAL-INSULATOR-SEMICONDUCTOR STRUCTURES/, Applied physics letters, 71(6), 1997, pp. 826-828
Citations number
11
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
71
Issue
6
Year of publication
1997
Pages
826 - 828
Database
ISI
SICI code
0003-6951(1997)71:6<826:EOCTIA>2.0.ZU;2-7
Abstract
Room temperature conductance transients in the SiNx:H/Si interface are reported. Silicon nitride thin films were directly deposited on silic on by the low temperature electron-cyclotron-resonance plasma method. The shape of the conductance transients varies with the frequency at w hich they are obtained. This behavior is explained in terms of a disor der-induced gap-state continuum model for the interfacial defects. A p erfect agreement between experiment and theory is obtained proving the validity of the model. (C) 1997 American Institute of Physics.