The effect of series resistance on calculation of the interface state density distribution in Schottky diodes

This work presents an attempt related to the importance of the fact that th e series resistance value is considered in calculating the interface state density distribution from the non-ideal forward bias current-voltage (I-V) characteristics of Au/n-Si Schottky barrier diodes (SBDs). To examine the c onsistency of this approach, Au/n-Si SBDs with Si bulk thicknesses of 200 a nd 400 mum have been prepared. Both diodes showed non-ideal I-V behaviour w ith ideality factors of 1.14 and 1.12, respectively, and thus it has been t hought that the diodes have a metal-interface layer-semiconductor configura tion. At the same energy position near the bottom of the conduction band, t he interface state density (N-SS) values, without taking into account the s eries resistance value of the devices, are almost one order of magnitude la rger than the N-SS values obtained taking into account the series resistanc e value.