Lattice location of hydrogen in Mg doped GaN

We have used ion channeling to examine the lattice configuration of hydroge n in Mg doped wurtzite GaN grown by metal organic chemical vapor deposition . Hydrogen is introduced by exposure to hydrogen gas or electron cyclotron resonance plasmas and by ion implantation. A density functional approach in cluding lattice relaxation was used to calculate total energies for various locations and charge states of hydrogen in the wurtzite Mg doped GaN latti ce. Results of channeling measurements are compared with channeling simulat ions for hydrogen at lattice locations predicted by the density functional theory. (C) 2001 American Institute of Physics.