Concentration dependence of the dielectric constant in mixed oxides MxOyMp' O-q

Citation
Rab. Devine et Ag. Revesz, Concentration dependence of the dielectric constant in mixed oxides MxOyMp' O-q, J APPL PHYS, 90(1), 2001, pp. 389-393
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
90
Issue
1
Year of publication
2001
Pages
389 - 393
Database
ISI
SICI code
0021-8979(20010701)90:1<389:CDOTDC>2.0.ZU;2-Q
Abstract
The dielectric constants in mixed oxides ZrO2+Y2O3, Ta2O5+TiO2, Ta2O5+Y2O3, and ZrO2+SiO2 are examined in the context of the oxide additivity rule for molecular polarizability. The experimentally observed concentration depend ence of the dielectric constant can be satisfactorily explained by taking a ccount of effective molecular polarizability and molecular volume changes. The simple rule thus enables predictive study of the dielectric constant of oxide alloys. (C) 2001 American Institute of Physics.