Re. Pritchard et al., Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates, J APPL PHYS, 90(1), 2001, pp. 475-480
Arrays of GaAs pyramids with square (001) bases of length 1-5 mum have been
fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001)
substrates. The optical properties of the pyramid faces have been studied b
y microreflection and microtransmission imaging measurements with light (la
mbda =900-1000 nm) incident through the pyramid base. Digitized charge coup
led device images indicate that total internal reflection occurs at the {11
0} pyramid facets and that their reflectivities are greater than 80%, provi
ded overgrowth of the facets does not occur. These properties suggest that
such structures may be suitable as the top mirror in novel micron-scale ver
tical microcavity devices. (C) 2001 American Institute of Physics.