Dh. Bao et al., Abnormal ferroelectric properties of compositionally graded Pb(Zr,Ti)O-3 thin films with LaNiO3 bottom electrodes, J APPL PHYS, 90(1), 2001, pp. 506-508
We report abnormal ferroelectric properties of compositionally graded Pb(Zr
,Ti)O-3 thin films on LaNiO3-coated SiO2/Si substrates, where Pb(Zr,Ti)O-3
and LaNiO3 films were prepared by a metalorganic decomposition technique an
d a sol-gel technique, respectively. It was found that the hysteresis loops
of the Pb(Zr,Ti)O-3 graded films measured by the conventional Sawyer-Tower
method shifted along the polarization axis, i.e., they showed polarization
offsets when applied by an alternating electric field. The polarization of
fsets were 82.5 muC/cm(2) at 270 kV/cm and 62.5 muC/cm(2) at 185 kV/cm for
the up-graded film and the down-graded film, respectively. The absolute mag
nitude of the polarization offsets was closely related to the magnitude of
the driving electric field, and the direction of the polarization offsets d
epended on the direction of the composition gradient with respect to the su
bstrate. Analysis indicated that the polarization offsets did not originate
from asymmetric contact effects, oxygen vacancies, alignment of defect dip
oles, and/or electron injection. These results showed that polarization off
sets in hysteresis loops were the intrinsic characteristic of the compositi
onally graded Pb(Zr,Ti)O-3 thin films. (C) 2001 American Institute of Physi
cs.