Surface morphology investigation of Si thin film grown by temperature modulation Si molecular-layer epitaxy

Si thin epitaxial layers were grown by a temperature modulation Si molecula r-layer epitaxy (TM Si MLE) method using Si2H6 gas. The surface was observe d by the use of a high-resolution field-emission scanning electron microsco pe (FE-SEM). The surface morphology changed drastically from a three-dimens ional island feature to a two-dimensional flat surface with lowering of the modulated temperature from 530 degreesC to 460 degreesC. In conjunction wi th the result of the in situ observation of the surface hydrogen desorption reaction, the mechanism of the change in the surface morphology was examin ed. (C) 2001 Published by Elsevier Science B.V.