Structural characterization of microscopic defects in (111) AgBrI microcrystals: Correlation of stacking fault defects to twin boundary morphology

Citation
S. Chen et al., Structural characterization of microscopic defects in (111) AgBrI microcrystals: Correlation of stacking fault defects to twin boundary morphology, J IMAG SC T, 45(3), 2001, pp. 230-233
Citations number
7
Categorie Soggetti
Optics & Acoustics
Journal title
JOURNAL OF IMAGING SCIENCE AND TECHNOLOGY
ISSN journal
10623701 → ACNP
Volume
45
Issue
3
Year of publication
2001
Pages
230 - 233
Database
ISI
SICI code
1062-3701(200105/06)45:3<230:SCOMDI>2.0.ZU;2-Y
Abstract
The introduction of iodide into (111)AgBr platelet crystals is known to ind uce the formation of structural defects, as well as enhance the photographi c response of the resulting AgBrI. The incorporation of iodide, introduced uniformly during crystal growth, has been reported to form internal stackin g faults, and more recently dislocation arrays. By using thermal processing to induce structural defects to regrow back into their matrix, it is possi ble to use this technique to probe specific defect characteristics, often a t the microstructure level. In this article, we reported a detailed study o f two iodide induced defects in (111)AgBrI crystals, using electron microsc opy, to determine their location and structural characteristics, as well as to estimate their enthalpy of activation.