S. Chen et al., Structural characterization of microscopic defects in (111) AgBrI microcrystals: Correlation of stacking fault defects to twin boundary morphology, J IMAG SC T, 45(3), 2001, pp. 230-233
The introduction of iodide into (111)AgBr platelet crystals is known to ind
uce the formation of structural defects, as well as enhance the photographi
c response of the resulting AgBrI. The incorporation of iodide, introduced
uniformly during crystal growth, has been reported to form internal stackin
g faults, and more recently dislocation arrays. By using thermal processing
to induce structural defects to regrow back into their matrix, it is possi
ble to use this technique to probe specific defect characteristics, often a
t the microstructure level. In this article, we reported a detailed study o
f two iodide induced defects in (111)AgBrI crystals, using electron microsc
opy, to determine their location and structural characteristics, as well as
to estimate their enthalpy of activation.