A novel extracellular calcium sensing mechanism in voltage-gated potassiumion channels

Citation
Jp. Johnson et al., A novel extracellular calcium sensing mechanism in voltage-gated potassiumion channels, J NEUROSC, 21(12), 2001, pp. 4143-4153
Citations number
74
Categorie Soggetti
Neurosciences & Behavoir
Journal title
JOURNAL OF NEUROSCIENCE
ISSN journal
02706474 → ACNP
Volume
21
Issue
12
Year of publication
2001
Pages
4143 - 4153
Database
ISI
SICI code
0270-6474(20010615)21:12<4143:ANECSM>2.0.ZU;2-W
Abstract
Potassium (K+) channels influence neurotransmitter release, burst firing ra te activity, pacing, and critical dampening of neuronal circuits. Internal and external factors that further modify K+ channel function permit fine-tu ning of neuronal circuits. Human ether-a-go-go-related gene (HERG) K+ chann els are unusually sensitive to external calcium concentration ([Ca2+](o)). Small changes in [Ca2+](o) shift the voltage dependence of channel activati on to more positive membrane potentials, an effect that cannot be explained by nonspecific surface charge screening or channel pore block. The HERG-ca lcium concentration-response relationship spans the physiological range for [Ca2+](o). The modulatory actions of calcium are attributable to differenc es in the Ca2+ affinity between rested and activated channels. Adjacent ext racellular, negatively charged amino acids (E518 and E519) near the S4 volt age sensor influence both channel gating and Ca2+ dependence. Neutralizatio n of these charges had distinct effects on channel gating and calcium sensi tivity. A change in the degree of energetic coupling between these amino ac ids on transition from closed to activated channel states reveals movement in this region during channel gating and defines a molecular mechanism for protein state-dependent ligand interactions. The results suggest a novel ex tracellular [Ca2+](o) sensing mechanism coupled to allosteric changes in ch annel gating and a mechanism for fine-tuning cell repolarization.