Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system

Citation
Xh. Xia et al., Etching and passivation of silicon in alkaline solution: A coupled chemical/electrochemical system, J PHYS CH B, 105(24), 2001, pp. 5722-5729
Citations number
31
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF PHYSICAL CHEMISTRY B
ISSN journal
15206106 → ACNP
Volume
105
Issue
24
Year of publication
2001
Pages
5722 - 5729
Database
ISI
SICI code
1520-6106(20010621)105:24<5722:EAPOSI>2.0.ZU;2-L
Abstract
Three types of experiments were used to study the surface chemistry of sili con in alkaline solution: minority carrier injection from a p-n junction el ectrode, in-situ photoluminescence, and electron transfer to a redox system in solution. The results lead to the conclusion that the surface chemistry and electrochemistry are determined to a large extent by an activated inte rmediate of the chemical etching reaction of silicon with water. This novel coupling of chemical and electrochemical steps can account for some unusua l features of the system, such as a mechanism for anodic oxidation and pass ivation based on electron injection and the strong influence of a weak oxid izing agent on the surface morphology of chemically etched silicon.