Preparation of 9/65/35 PLZT thin films deposited by a dip-coating process

Citation
Az. Simoes et al., Preparation of 9/65/35 PLZT thin films deposited by a dip-coating process, J EUR CERAM, 21(9), 2001, pp. 1151-1157
Citations number
18
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF THE EUROPEAN CERAMIC SOCIETY
ISSN journal
09552219 → ACNP
Volume
21
Issue
9
Year of publication
2001
Pages
1151 - 1157
Database
ISI
SICI code
0955-2219(200109)21:9<1151:PO9PTF>2.0.ZU;2-8
Abstract
Crack-free polycrystalline PLZT (Pb,a)(Zr,Ti)O-3 thin films with the perovs kite structure were prepared by dir-coating using the Pechinis process. Lea d acetate, hydrated lanthanum carbonate, zirconium n-propoxide and titanium isopropoxide were used as raw materials. The viscosity of the solution was adjusted in the range of 20 to 56 cP and the films were deposited by a dip -coating process on silicon (100) as substrate. Solutions with ionic concen tration of 0.1 and 0.2 M were used. Thin film deposition was accomplished b y dipping the substrates in the solution with control of withdrawal speed f rom 5 to 20 mm/min. The thin films were thermally treated in two steps: at 300 degreesC amid 650 degreesC. The influence of withdrawal speed. viscosit y, heating rate and ionic concentration on the morphology of PLZT thin film was discussed. (C) 2001 Elsevier Science Ltd. All rights reserved.