Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001)

Citation
S. Rogge et al., Field-based scanning tunneling microscope manipulation of antimony dimers on Si(001), J VAC SCI B, 19(3), 2001, pp. 659-665
Citations number
16
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
659 - 665
Database
ISI
SICI code
1071-1023(200105/06)19:3<659:FSTMMO>2.0.ZU;2-1
Abstract
The manipulation of antimony dimers, Sb-2, on the silicon (001) surface by means of a scanning tunneling microscope (STM) has been experimentally inve stigated. Directed hopping of the Sb2 dimers due the STM tip can dominate o ver the thermal motion at temperatures between 300 and 500 K. Statistics on the enhanced hopping are reported and possible tip-adsorbate models are di scussed focusing on a field-based interaction. The low yield of directed ho pping is believed to be due to the low gradient in the interaction energy i ntrinsic to a field-based mechanism. Ultimate resolution and limiting facto rs of this manipulation technique are discussed. (C) 2001 American Vacuum S ociety.