Use of microfabricated cold field emitters in sub-100 nm maskless lithography

Citation
Gx. Gu et al., Use of microfabricated cold field emitters in sub-100 nm maskless lithography, J VAC SCI B, 19(3), 2001, pp. 862-865
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
19
Issue
3
Year of publication
2001
Pages
862 - 865
Database
ISI
SICI code
1071-1023(200105/06)19:3<862:UOMCFE>2.0.ZU;2-0
Abstract
We propose a multicolumn and multibeam electron beam direct write lithograp hy scheme using arrays of cold cathode emitters as the electron source. The conceptual design and the requirements for the field emitters in this appl ication will be described. We have fabricated and tested both silicon field emitters and Spindt-type metal field emitters. Tip current stability was i mproved by pulse conditioning. Patterns with 117 nm feature sizes were writ ten on poly(methylmethacrylate) photo resist. (C) 2001 American Vacuum Soci ety.