Secondary electron omission characteristics for sol-gel based SiO2 thin films

We have fabricated six SiO2 thin films by the spin coating of tetraethyl or thosilicate (TEOS) sol-gel solutions of different concentrations. It was fo und that the thickness of SiO2 film decreased as the concentration of TEOS decreased. Among six samples, 9 nm thick SiO2 film exhibited the highest se condary electron emission (SEE) yield. Moreover, SEE yields for sol-gel bas ed SiO2 films were found to be higher than those for thermal SiO2 films. In order to confirm the applicability of this method, electron-amplifying mic rochannel plates (MCPs) with a sol-gel based SiO2 layer as an electron emis sive layer were fabricated and their amplifying characteristics were invest igated. Reasonably good current gains were obtained for those MCPs suggesti ng that this SiO2 layer formed by the sol-gel method was a good candidate f or a SEE layer. (C) 2001 American Vacuum Society.